Elastic strain fields of dislocation and dislocation networks as derived by numerical extended FEM (XFEM) and analytical tools

The strain field by a single dislocation can be calculated based on text-book knowledge, however,
more complex arrangements usually require numerical approaches. Numerical extended finite element methods (XFEM) may serve as a versatile tool to consider highly realistic geometries and full elastic anisotropy (particularly in 2D layered materials or materials with low crystal symmetry or high anisotropy). A detailed knowledge of the resulting strain landscape contributes to a better understanding of the elastic properties and potentially provides the key to drive plastic relaxation pathway.
Objectives:
Creating XFEM cases for single and multiple dislocation arrangements in various crystallographic systems (e.g., isotropic, cubic and trigonal) and compare results to analytical calculations.

Background in semiconductor physics, materials science, or related fields.
Experience in numerical data treatment as e.g. python but not necessarily Finite Element code

Opportunities and Benefits:

• Modern computational infrastructure
• Supportive environment with experts for various scientific sub-fields
• International and culturally diverse community
• Location in the heart of Berlin with excellent public transport connections
• Subsidized travel ticket

Contact:
Dr. habil. Michael Hanke
+49 30 20377-287
hanke@pdi-berlin.de